IS43R16160F-6BLI-TR ISSI, Integrated Silicon Solution Inc
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC DRAM 256MBIT PAR 60TFBGA
DigiKey Programmable: Not Verified
Memory Organization: 16M x 16
Access Time: 700 ps
Memory Interface: Parallel
Write Cycle Time - Word, Page: 15ns
Supplier Device Package: 60-TFBGA (8x13)
Memory Format: DRAM
Clock Frequency: 166 MHz
Technology: SDRAM - DDR
Voltage - Supply: 2.3V ~ 2.7V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 256Mbit
Mounting Type: Surface Mount
Package / Case: 60-TFBGA
Packaging: Tape & Reel (TR)
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Технічний опис IS43R16160F-6BLI-TR ISSI, Integrated Silicon Solution Inc
Description: IC DRAM 256MBIT PAR 60TFBGA, DigiKey Programmable: Not Verified, Memory Organization: 16M x 16, Access Time: 700 ps, Memory Interface: Parallel, Write Cycle Time - Word, Page: 15ns, Supplier Device Package: 60-TFBGA (8x13), Memory Format: DRAM, Clock Frequency: 166 MHz, Technology: SDRAM - DDR, Voltage - Supply: 2.3V ~ 2.7V, Operating Temperature: -40°C ~ 85°C (TA), Memory Type: Volatile, Memory Size: 256Mbit, Mounting Type: Surface Mount, Package / Case: 60-TFBGA, Packaging: Tape & Reel (TR).
Інші пропозиції IS43R16160F-6BLI-TR
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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IS43R16160F-6BLI-TR | Виробник : ISSI |
DRAM 256M, 2.5V, DDR, 16Mx16, 166MHz, 60 ball BGA (8mmx13mm) RoHS, IT, T&R |
товару немає в наявності |
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| IS43R16160F-6BLI-TR | Виробник : ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60 Kind of package: reel; tape Kind of interface: parallel Mounting: SMD Case: TFBGA60 Operating temperature: -40...85°C Access time: 6ns Supply voltage: 2.5V DC Memory: 256Mb DRAM Clock frequency: 166MHz Memory organisation: 4Mx16bitx4 Kind of memory: DDR1; SDRAM Type of integrated circuit: DRAM memory |
товару немає в наявності |