| Кількість | Ціна |
|---|---|
| 2+ | 303.43 грн |
| 100+ | 293.50 грн |
| 190+ | 213.49 грн |
| 570+ | 206.54 грн |
Відгуки про товар
Написати відгук
Технічний опис IS43R16160F-6BLI ISSI
Description: IC DRAM 256MBIT PAR 60TFBGA, DigiKey Programmable: Not Verified, Memory Organization: 16M x 16, Access Time: 700 ps, Memory Interface: Parallel, Write Cycle Time - Word, Page: 15ns, Part Status: Active, Supplier Device Package: 60-TFBGA (8x13), Memory Format: DRAM, Clock Frequency: 166 MHz, Technology: SDRAM - DDR, Voltage - Supply: 2.3V ~ 2.7V, Operating Temperature: -40°C ~ 85°C (TA), Memory Type: Volatile, Memory Size: 256Mbit, Mounting Type: Surface Mount, Package / Case: 60-TFBGA, Packaging: Tray.
Інші пропозиції IS43R16160F-6BLI
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
IS43R16160F-6BLI | Виробник : ISSI, Integrated Silicon Solution Inc |
 Description: IC DRAM 256MBIT PAR 60TFBGADigiKey Programmable: Not Verified Memory Organization: 16M x 16 Access Time: 700 ps Memory Interface: Parallel Write Cycle Time - Word, Page: 15ns Part Status: Active Supplier Device Package: 60-TFBGA (8x13) Memory Format: DRAM Clock Frequency: 166 MHz Technology: SDRAM - DDR Voltage - Supply: 2.3V ~ 2.7V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Volatile Memory Size: 256Mbit Mounting Type: Surface Mount Package / Case: 60-TFBGA Packaging: Tray |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
|
| IS43R16160F-6BLI | Виробник : ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60 Kind of package: in-tray; tube Kind of interface: parallel Mounting: SMD Case: TFBGA60 Operating temperature: -40...85°C Access time: 6ns Supply voltage: 2.5V DC Memory: 256Mb DRAM Clock frequency: 166MHz Memory organisation: 4Mx16bitx4 Kind of memory: DDR1; SDRAM Type of integrated circuit: DRAM memory |
товару немає в наявності |