Технічний опис IS43R16320F-6TLI ISSI
Description: IC DRAM 512MBIT PAR 66TSOP II, Packaging: Tray, Package / Case: 66-TSSOP (0.400", 10.16mm Width), Mounting Type: Surface Mount, Memory Size: 512Mbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 2.3V ~ 2.7V, Technology: SDRAM - DDR, Clock Frequency: 167 MHz, Memory Format: DRAM, Supplier Device Package: 66-TSOP II, Write Cycle Time - Word, Page: 15ns, Memory Interface: Parallel, Access Time: 700 ps, Memory Organization: 32M x 16, DigiKey Programmable: Not Verified.
Інші пропозиції IS43R16320F-6TLI за ціною від 291.39 грн до 291.39 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||
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IS43R16320F-6TLI | Виробник : ISSI | DRAM Chip DDR SDRAM 512Mbit 32Mx16 2.5V 66-Pin TSOP-II |
на замовлення 108 шт: термін постачання 21-31 дні (днів) |
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IS43R16320F-6TLI | Виробник : ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TSOP66 II Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 512Mb DRAM Memory organisation: 8Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TSOP66 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 2.5V DC кількість в упаковці: 108 шт |
товар відсутній |
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IS43R16320F-6TLI | Виробник : ISSI, Integrated Silicon Solution Inc |
Description: IC DRAM 512MBIT PAR 66TSOP II Packaging: Tray Package / Case: 66-TSSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.3V ~ 2.7V Technology: SDRAM - DDR Clock Frequency: 167 MHz Memory Format: DRAM Supplier Device Package: 66-TSOP II Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 700 ps Memory Organization: 32M x 16 DigiKey Programmable: Not Verified |
товар відсутній |
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IS43R16320F-6TLI | Виробник : ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TSOP66 II Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 512Mb DRAM Memory organisation: 8Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TSOP66 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 2.5V DC |
товар відсутній |