IS46TR81024B-107MBLA1 ISSI, Integrated Silicon Solution Inc
Виробник: ISSI, Integrated Silicon Solution Inc
Description: Automotive (Tc: -40 to +95C), 8G
Packaging: Bulk
Package / Case: 78-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.425V ~ 1.575V
Technology: SDRAM - DDR3
Clock Frequency: 933 MHz
Memory Format: DRAM
Supplier Device Package: 78-TWBGA (10x14)
Grade: Automotive
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 1G x 8
Qualification: AEC-Q100
Description: Automotive (Tc: -40 to +95C), 8G
Packaging: Bulk
Package / Case: 78-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.425V ~ 1.575V
Technology: SDRAM - DDR3
Clock Frequency: 933 MHz
Memory Format: DRAM
Supplier Device Package: 78-TWBGA (10x14)
Grade: Automotive
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 1G x 8
Qualification: AEC-Q100
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Технічний опис IS46TR81024B-107MBLA1 ISSI, Integrated Silicon Solution Inc
Description: Automotive (Tc: -40 to +95C), 8G, Packaging: Bulk, Package / Case: 78-TFBGA, Mounting Type: Surface Mount, Memory Size: 8Gbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 95°C (TC), Voltage - Supply: 1.425V ~ 1.575V, Technology: SDRAM - DDR3, Clock Frequency: 933 MHz, Memory Format: DRAM, Supplier Device Package: 78-TWBGA (10x14), Grade: Automotive, Write Cycle Time - Word, Page: 15ns, Memory Interface: Parallel, Access Time: 20 ns, Memory Organization: 1G x 8, Qualification: AEC-Q100.
Інші пропозиції IS46TR81024B-107MBLA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
IS46TR81024B-107MBLA1 | Виробник : ISSI |
 DRAM 8G 1Gx8 1866MT/s 1.5V DDR3 A-Temp |
товару немає в наявності |