Технічний опис IS61LF12836EC-7.5TQLI-TR ISSI
Description: IC SRAM 4.5MBIT PARALLEL 100LQFP, Packaging: Tape & Reel (TR), Package / Case: 100-LQFP, Mounting Type: Surface Mount, Memory Size: 4.5Mbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 3.135V ~ 3.465V, Technology: SRAM - Synchronous, SDR, Clock Frequency: 117 MHz, Memory Format: SRAM, Supplier Device Package: 100-LQFP (14x20), Part Status: Active, Memory Interface: Parallel, Access Time: 7.5 ns, Memory Organization: 128K x 36.
Інші пропозиції IS61LF12836EC-7.5TQLI-TR
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IS61LF12836EC-7.5TQLI-TR | Виробник : ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; QFP100 Type of integrated circuit: SRAM memory Case: QFP100 Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Operating voltage: 3.3V Kind of memory: SRAM Memory organisation: 128kx36bit Access time: 7.5ns Kind of interface: parallel Memory: 4.5Mb SRAM кількість в упаковці: 800 шт |
товар відсутній |
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IS61LF12836EC-7.5TQLI-TR | Виробник : ISSI | SRAM Chip Sync Quad 3.3V 4M-bit 128K x 36 7.5ns 100-Pin TQFP T/R |
товар відсутній |
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IS61LF12836EC-7.5TQLI-TR | Виробник : ISSI, Integrated Silicon Solution Inc |
Description: IC SRAM 4.5MBIT PARALLEL 100LQFP Packaging: Tape & Reel (TR) Package / Case: 100-LQFP Mounting Type: Surface Mount Memory Size: 4.5Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 3.135V ~ 3.465V Technology: SRAM - Synchronous, SDR Clock Frequency: 117 MHz Memory Format: SRAM Supplier Device Package: 100-LQFP (14x20) Part Status: Active Memory Interface: Parallel Access Time: 7.5 ns Memory Organization: 128K x 36 |
товар відсутній |
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IS61LF12836EC-7.5TQLI-TR | Виробник : ISSI | SRAM 4Mb,Flow-Through,Sync with ECC,128K x 36,7.5ns,3.3v I/O,100 Pin TQFP, RoHS |
товар відсутній |
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IS61LF12836EC-7.5TQLI-TR | Виробник : ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; QFP100 Type of integrated circuit: SRAM memory Case: QFP100 Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Operating voltage: 3.3V Kind of memory: SRAM Memory organisation: 128kx36bit Access time: 7.5ns Kind of interface: parallel Memory: 4.5Mb SRAM |
товар відсутній |