Технічний опис IS61LF51218B-7.5TQLI-TR ISSI
Category: Parallel SRAM memories - integ. circ., Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 7.5ns; QFP100; parallel, Case: QFP100, Mounting: SMD, Kind of memory: SRAM, Type of integrated circuit: SRAM memory, Operating temperature: -40...85°C, Access time: 7.5ns, Operating voltage: 3.3V, Memory: 9Mb SRAM, Memory organisation: 512kx18bit, Kind of package: reel; tape, Kind of interface: parallel.
Інші пропозиції IS61LF51218B-7.5TQLI-TR
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
| IS61LF51218B-7.5TQLI-TR | ISSI |
 Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 7.5ns; QFP100; parallel Case: QFP100 Mounting: SMD Kind of memory: SRAM Type of integrated circuit: SRAM memory Operating temperature: -40...85°C Access time: 7.5ns Operating voltage: 3.3V Memory: 9Mb SRAM Memory organisation: 512kx18bit Kind of package: reel; tape Kind of interface: parallel |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. |
| IS61LF51218B-7.5TQLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 7.5ns; QFP100; parallel
Case: QFP100
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 7.5ns
Operating voltage: 3.3V
Memory: 9Mb SRAM
Memory organisation: 512kx18bit
Kind of package: reel; tape
Kind of interface: parallel
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 7.5ns; QFP100; parallel
Case: QFP100
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 7.5ns
Operating voltage: 3.3V
Memory: 9Mb SRAM
Memory organisation: 512kx18bit
Kind of package: reel; tape
Kind of interface: parallel
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.