Технічний опис IS61LF51236B-7.5B3LI ISSI
Category: Parallel SRAM memories - integ. circ., Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 7.5ns; TFBGA165, Type of integrated circuit: SRAM memory, Case: TFBGA165, Mounting: SMD, Operating temperature: -40...85°C, Kind of package: in-tray; tube, Kind of interface: parallel, Kind of memory: SRAM, Access time: 7.5ns, Operating voltage: 3.3V, Memory: 18Mb SRAM, Memory organisation: 512kx36bit.
Інші пропозиції IS61LF51236B-7.5B3LI
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
| IS61LF51236B-7.5B3LI | ISSI |
 Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 7.5ns; TFBGA165 Type of integrated circuit: SRAM memory Case: TFBGA165 Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Kind of interface: parallel Kind of memory: SRAM Access time: 7.5ns Operating voltage: 3.3V Memory: 18Mb SRAM Memory organisation: 512kx36bit |
товару немає в наявності |
Мінімальне замовлення: 144 шт В кошику од. на суму грн. |
| IS61LF51236B-7.5B3LI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 7.5ns; TFBGA165
Type of integrated circuit: SRAM memory
Case: TFBGA165
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Kind of memory: SRAM
Access time: 7.5ns
Operating voltage: 3.3V
Memory: 18Mb SRAM
Memory organisation: 512kx36bit
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 7.5ns; TFBGA165
Type of integrated circuit: SRAM memory
Case: TFBGA165
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Kind of memory: SRAM
Access time: 7.5ns
Operating voltage: 3.3V
Memory: 18Mb SRAM
Memory organisation: 512kx36bit
товару немає в наявності
Мінімальне замовлення: 144 шт
В кошику
од. на суму грн.