IS61LPS102436B-200TQLI ISSI, Integrated Silicon Solution Inc
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC SRAM 36MBIT PARALLEL 100LQFP
Clock Frequency: 200 MHz
Technology: SRAM - Synchronous, SDR
Voltage - Supply: 3.135V ~ 3.465V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 36Mbit
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
Memory Organization: 1M x 36
Access Time: 3.1 ns
Memory Interface: Parallel
Supplier Device Package: 100-LQFP (14x20)
Memory Format: SRAM
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Технічний опис IS61LPS102436B-200TQLI ISSI, Integrated Silicon Solution Inc
Description: IC SRAM 36MBIT PARALLEL 100LQFP, Clock Frequency: 200 MHz, Technology: SRAM - Synchronous, SDR, Voltage - Supply: 3.135V ~ 3.465V, Operating Temperature: -40°C ~ 85°C (TA), Memory Type: Volatile, Memory Size: 36Mbit, Mounting Type: Surface Mount, Package / Case: 100-LQFP, Packaging: Tray, DigiKey Programmable: Not Verified, Memory Organization: 1M x 36, Access Time: 3.1 ns, Memory Interface: Parallel, Supplier Device Package: 100-LQFP (14x20), Memory Format: SRAM.
Інші пропозиції IS61LPS102436B-200TQLI
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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IS61LPS102436B-200TQLI | Виробник : ISSI |
SRAM 36Mb,Pipeline,Sync,1Mb x 36,200Mhz,33V or 25V I/O,100 Pin TQFP, RoHS |
товару немає в наявності |
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| IS61LPS102436B-200TQLI | Виробник : ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 36MbSRAM; 1Mx36bit; 3.3V; 3.1ns; QFP100; parallel Type of integrated circuit: SRAM memory Kind of package: in-tray; tube Mounting: SMD Kind of interface: parallel Case: QFP100 Kind of memory: SRAM Operating temperature: -40...85°C Access time: 3.1ns Operating voltage: 3.3V Memory: 36Mb SRAM Memory organisation: 1Mx36bit |
товару немає в наявності |