Технічний опис IS61LPS25618EC-200TQLI ISSI
Description: IC SRAM 4.5MBIT PARALLEL 100LQFP, Packaging: Tray, Package / Case: 100-LQFP, Mounting Type: Surface Mount, Memory Size: 4.5Mbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 3.135V ~ 3.465V, Technology: SRAM - Synchronous, SDR, Clock Frequency: 200 MHz, Memory Format: SRAM, Supplier Device Package: 100-LQFP (14x20), Memory Interface: Parallel, Access Time: 3.1 ns, Memory Organization: 256K x 18, DigiKey Programmable: Not Verified.
Інші пропозиції IS61LPS25618EC-200TQLI
| Фото | Назва | Виробник | Інформація |
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IS61LPS25618EC-200TQLI | Виробник : ISSI, Integrated Silicon Solution Inc |
 Description: IC SRAM 4.5MBIT PARALLEL 100LQFPPackaging: Tray Package / Case: 100-LQFP Mounting Type: Surface Mount Memory Size: 4.5Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 3.135V ~ 3.465V Technology: SRAM - Synchronous, SDR Clock Frequency: 200 MHz Memory Format: SRAM Supplier Device Package: 100-LQFP (14x20) Memory Interface: Parallel Access Time: 3.1 ns Memory Organization: 256K x 18 DigiKey Programmable: Not Verified |
товару немає в наявності |
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IS61LPS25618EC-200TQLI | Виробник : ISSI |
SRAM 4Mb, 3.3v, 200Mhz 256K x 18 Sync SRAM |
товару немає в наявності |
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| IS61LPS25618EC-200TQLI | Виробник : ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4.5MbSRAM; 256kx18bit; 3.3V; 3.1ns; QFP100 Type of integrated circuit: SRAM memory Kind of package: in-tray; tube Kind of interface: parallel Mounting: SMD Kind of memory: SRAM Operating temperature: -40...85°C Access time: 3.1ns Operating voltage: 3.3V Memory organisation: 256kx18bit Memory: 4.5Mb SRAM Case: QFP100 |
товару немає в наявності |