IS61LPS25636A-200TQLI-TR ISSI, Integrated Silicon Solution Inc
Виробник: ISSI, Integrated Silicon Solution IncDescription: IC SRAM 9MBIT PARALLEL 100TQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 9Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.465V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 100-LQFP (14x20)
Memory Interface: Parallel
Access Time: 3.1 ns
Memory Organization: 256K x 36
DigiKey Programmable: Not Verified
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Технічний опис IS61LPS25636A-200TQLI-TR ISSI, Integrated Silicon Solution Inc
Description: IC SRAM 9MBIT PARALLEL 100TQFP, Packaging: Tape & Reel (TR), Package / Case: 100-LQFP, Mounting Type: Surface Mount, Memory Size: 9Mbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 3.135V ~ 3.465V, Technology: SRAM - Synchronous, SDR, Clock Frequency: 200 MHz, Memory Format: SRAM, Supplier Device Package: 100-LQFP (14x20), Memory Interface: Parallel, Access Time: 3.1 ns, Memory Organization: 256K x 36, DigiKey Programmable: Not Verified.
Інші пропозиції IS61LPS25636A-200TQLI-TR
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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IS61LPS25636A-200TQLI-TR | Виробник : ISSI |
SRAM 8Mb,Pipeline,Sync,256K x 36,200Mhz,3.3v I/O,100 Pin TQFP,3CE, RoHS |
товару немає в наявності |
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| IS61LPS25636A-200TQLI-TR | Виробник : ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 3.5ns; QFP100; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 9Mb SRAM Memory organisation: 256kx36bit Operating voltage: 3.3V Access time: 3.5ns Case: QFP100 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |