IS61LPS51218A-200TQLI ISSI
| Кількість | Ціна |
|---|---|
| 1+ | 1663.99 грн |
| 10+ | 1520.26 грн |
| 25+ | 1280.24 грн |
| 50+ | 1248.95 грн |
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Технічний опис IS61LPS51218A-200TQLI ISSI
Description: IC SRAM 9MBIT PARALLEL 100TQFP, DigiKey Programmable: Not Verified, Memory Organization: 512K x 18, Access Time: 3.1 ns, Memory Interface: Parallel, Supplier Device Package: 100-LQFP (14x20), Memory Format: SRAM, Clock Frequency: 200 MHz, Technology: SRAM - Synchronous, SDR, Voltage - Supply: 3.135V ~ 3.465V, Operating Temperature: -40°C ~ 85°C (TA), Memory Type: Volatile, Memory Size: 9Mbit, Mounting Type: Surface Mount, Package / Case: 100-LQFP, Packaging: Tray.
Інші пропозиції IS61LPS51218A-200TQLI
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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IS61LPS51218A-200TQLI | Виробник : ISSI, Integrated Silicon Solution Inc |
 Description: IC SRAM 9MBIT PARALLEL 100TQFPDigiKey Programmable: Not Verified Memory Organization: 512K x 18 Access Time: 3.1 ns Memory Interface: Parallel Supplier Device Package: 100-LQFP (14x20) Memory Format: SRAM Clock Frequency: 200 MHz Technology: SRAM - Synchronous, SDR Voltage - Supply: 3.135V ~ 3.465V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Volatile Memory Size: 9Mbit Mounting Type: Surface Mount Package / Case: 100-LQFP Packaging: Tray |
товару немає в наявності |
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| IS61LPS51218A-200TQLI | Виробник : ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 3.1ns; QFP100; parallel Case: QFP100 Mounting: SMD Kind of memory: SRAM Type of integrated circuit: SRAM memory Operating temperature: -40...85°C Access time: 3.1ns Operating voltage: 3.3V Memory: 9Mb SRAM Memory organisation: 512kx18bit Kind of package: in-tray; tube Kind of interface: parallel |
товару немає в наявності |