Технічний опис IS61LV25616AL-10BI ISSI
Description: IC SRAM 4MBIT PARALLEL 48TFBGA, Packaging: Tray, Package / Case: 48-TFBGA, Mounting Type: Surface Mount, Memory Size: 4Mbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 3.135V ~ 3.6V, Technology: SRAM - Asynchronous, Memory Format: SRAM, Supplier Device Package: 48-TFBGA (8x10), Write Cycle Time - Word, Page: 10ns, Memory Interface: Parallel, Access Time: 10 ns, Memory Organization: 256K x 16, DigiKey Programmable: Not Verified.
Інші пропозиції IS61LV25616AL-10BI
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
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IS61LV25616AL-10BI | ISSI, Integrated Silicon Solution Inc |
 Description: IC SRAM 4MBIT PARALLEL 48TFBGAPackaging: Tray Package / Case: 48-TFBGA Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 3.135V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 48-TFBGA (8x10) Write Cycle Time - Word, Page: 10ns Memory Interface: Parallel Access Time: 10 ns Memory Organization: 256K x 16 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. |
 |
IS61LV25616AL-10BI | ISSI |
SRAM 4Mb 256Kx16 10ns Async SRAM 3.3v |
товару немає в наявності |
В кошику од. на суму грн. |
| IS61LV25616AL-10BI |
|
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC SRAM 4MBIT PARALLEL 48TFBGA
Packaging: Tray
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-TFBGA (8x10)
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
Description: IC SRAM 4MBIT PARALLEL 48TFBGA
Packaging: Tray
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-TFBGA (8x10)
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| IS61LV25616AL-10BI |
|
Виробник: ISSI
SRAM 4Mb 256Kx16 10ns Async SRAM 3.3v
SRAM 4Mb 256Kx16 10ns Async SRAM 3.3v
товару немає в наявності
В кошику
од. на суму грн.