Технічний опис IS61NLF51218B-7.5TQLI ISSI
Category: Parallel SRAM memories - integ. circ., Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 7.5ns; QFP100; parallel, Case: QFP100, Mounting: SMD, Kind of memory: SRAM, Type of integrated circuit: SRAM memory, Operating temperature: -40...85°C, Access time: 7.5ns, Operating voltage: 3.3V, Memory: 9Mb SRAM, Memory organisation: 512kx18bit, Kind of package: in-tray; tube, Kind of interface: parallel.
Інші пропозиції IS61NLF51218B-7.5TQLI
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| IS61NLF51218B-7.5TQLI | Виробник : ISSI |
 Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 7.5ns; QFP100; parallel Case: QFP100 Mounting: SMD Kind of memory: SRAM Type of integrated circuit: SRAM memory Operating temperature: -40...85°C Access time: 7.5ns Operating voltage: 3.3V Memory: 9Mb SRAM Memory organisation: 512kx18bit Kind of package: in-tray; tube Kind of interface: parallel |
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