IS61NLP102418B-200B3L ISSI, Integrated Silicon Solution Inc
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC SRAM 18MBIT PARALLEL 165TFBGA
Packaging: Tray
Package / Case: 165-TBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.465V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 165-TFBGA (13x15)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
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Технічний опис IS61NLP102418B-200B3L ISSI, Integrated Silicon Solution Inc
Description: IC SRAM 18MBIT PARALLEL 165TFBGA, Packaging: Tray, Package / Case: 165-TBGA, Mounting Type: Surface Mount, Memory Size: 18Mbit, Memory Type: Volatile, Operating Temperature: 0°C ~ 70°C (TA), Voltage - Supply: 3.135V ~ 3.465V, Technology: SRAM - Synchronous, SDR, Clock Frequency: 200 MHz, Memory Format: SRAM, Supplier Device Package: 165-TFBGA (13x15), Memory Interface: Parallel, Access Time: 3 ns, Memory Organization: 1M x 18, DigiKey Programmable: Not Verified.
Інші пропозиції IS61NLP102418B-200B3L
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
| IS61NLP102418B-200B3L | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 3ns; TFBGA165; parallel Type of integrated circuit: SRAM memory Case: TFBGA165 Mounting: SMD Kind of package: in-tray; tube Operating temperature: 0...70°C Memory: 18Mb SRAM Kind of interface: parallel Memory organisation: 1Mx18bit Operating voltage: 3.3V Kind of memory: SRAM Access time: 3ns |
товару немає в наявності |
Мінімальне замовлення: 144 шт В кошику од. на суму грн. |
| IS61NLP102418B-200B3L |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 3ns; TFBGA165; parallel
Type of integrated circuit: SRAM memory
Case: TFBGA165
Mounting: SMD
Kind of package: in-tray; tube
Operating temperature: 0...70°C
Memory: 18Mb SRAM
Kind of interface: parallel
Memory organisation: 1Mx18bit
Operating voltage: 3.3V
Kind of memory: SRAM
Access time: 3ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 3ns; TFBGA165; parallel
Type of integrated circuit: SRAM memory
Case: TFBGA165
Mounting: SMD
Kind of package: in-tray; tube
Operating temperature: 0...70°C
Memory: 18Mb SRAM
Kind of interface: parallel
Memory organisation: 1Mx18bit
Operating voltage: 3.3V
Kind of memory: SRAM
Access time: 3ns
товару немає в наявності
Мінімальне замовлення: 144 шт
В кошику
од. на суму грн.


