IS61NLP102418B-200B3LI-TR ISSI, Integrated Silicon Solution Inc
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC SRAM 18MBIT PARALLEL 165TFBGA
DigiKey Programmable: Not Verified
Memory Organization: 1M x 18
Access Time: 3 ns
Memory Interface: Parallel
Supplier Device Package: 165-TFBGA (13x15)
Memory Format: SRAM
Clock Frequency: 200 MHz
Technology: SRAM - Synchronous, SDR
Voltage - Supply: 3.135V ~ 3.465V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 18Mbit
Mounting Type: Surface Mount
Package / Case: 165-TBGA
Packaging: Tape & Reel (TR)
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Технічний опис IS61NLP102418B-200B3LI-TR ISSI, Integrated Silicon Solution Inc
Description: IC SRAM 18MBIT PARALLEL 165TFBGA, DigiKey Programmable: Not Verified, Memory Organization: 1M x 18, Access Time: 3 ns, Memory Interface: Parallel, Supplier Device Package: 165-TFBGA (13x15), Memory Format: SRAM, Clock Frequency: 200 MHz, Technology: SRAM - Synchronous, SDR, Voltage - Supply: 3.135V ~ 3.465V, Operating Temperature: -40°C ~ 85°C (TA), Memory Type: Volatile, Memory Size: 18Mbit, Mounting Type: Surface Mount, Package / Case: 165-TBGA, Packaging: Tape & Reel (TR).
Інші пропозиції IS61NLP102418B-200B3LI-TR
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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IS61NLP102418B-200B3LI-TR | Виробник : ISSI |
SRAM 18Mb,"No-Wait"/Pipeline,Sync,1Mb x 18,200Mhz,3.3v/2.5v - I/O,165 Ball BGA, RoHS |
товару немає в наявності |
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| IS61NLP102418B-200B3LI-TR | Виробник : ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 3ns; TFBGA165; parallel Kind of interface: parallel Case: TFBGA165 Mounting: SMD Kind of memory: SRAM Type of integrated circuit: SRAM memory Operating temperature: -40...85°C Access time: 3ns Operating voltage: 3.3V Memory organisation: 1Mx18bit Memory: 18Mb SRAM Kind of package: reel; tape |
товару немає в наявності |