Технічний опис IS61NLP102418B-200TQLI ISSI
Description: IC SRAM 18MBIT PARALLEL 100LQFP, Packaging: Tray, Package / Case: 100-LQFP, Mounting Type: Surface Mount, Memory Size: 18Mbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 3.135V ~ 3.465V, Technology: SRAM - Synchronous, SDR, Clock Frequency: 200 MHz, Memory Format: SRAM, Supplier Device Package: 100-LQFP (14x20), Part Status: Active, Memory Interface: Parallel, Access Time: 3 ns, Memory Organization: 1M x 18, DigiKey Programmable: Not Verified.
Інші пропозиції IS61NLP102418B-200TQLI
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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IS61NLP102418B-200TQLI | Виробник : ISSI |
 SRAM Chip Sync Quad 3.3V 18M-bit 1M x 18 3ns 100-Pin LQFP |
товару немає в наявності |
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| IS61NLP102418B-200TQLI | Виробник : ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 3ns; QFP100; parallel Operating voltage: 3.3V Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 1Mx18bit Access time: 3ns Kind of package: in-tray; tube Kind of interface: parallel Memory: 18Mb SRAM Mounting: SMD Operating temperature: -40...85°C Case: QFP100 кількість в упаковці: 72 шт |
товару немає в наявності |
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IS61NLP102418B-200TQLI | Виробник : ISSI, Integrated Silicon Solution Inc |
Description: IC SRAM 18MBIT PARALLEL 100LQFP Packaging: Tray Package / Case: 100-LQFP Mounting Type: Surface Mount Memory Size: 18Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 3.135V ~ 3.465V Technology: SRAM - Synchronous, SDR Clock Frequency: 200 MHz Memory Format: SRAM Supplier Device Package: 100-LQFP (14x20) Part Status: Active Memory Interface: Parallel Access Time: 3 ns Memory Organization: 1M x 18 DigiKey Programmable: Not Verified |
товару немає в наявності |
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IS61NLP102418B-200TQLI | Виробник : ISSI |
SRAM 18Mb,"No-Wait"/Pipeline,Sync,1Mb x 18,200Mhz,3.3v/2.5v - I/O,100 Pin TQFP, RoHS |
товару немає в наявності |
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| IS61NLP102418B-200TQLI | Виробник : ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 3ns; QFP100; parallel Operating voltage: 3.3V Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 1Mx18bit Access time: 3ns Kind of package: in-tray; tube Kind of interface: parallel Memory: 18Mb SRAM Mounting: SMD Operating temperature: -40...85°C Case: QFP100 |
товару немає в наявності |