IS61NLP102418B-250B3L ISSI
Виробник: ISSICategory: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 2.6ns; TFBGA165; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 18Mb SRAM
Memory organisation: 1Mx18bit
Operating voltage: 3.3V
Access time: 2.6ns
Case: TFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray; tube
кількість в упаковці: 144 шт
товару немає в наявності
Відгуки про товар
Написати відгук
Технічний опис IS61NLP102418B-250B3L ISSI
Description: IC SRAM 18MBIT PARALLEL 165TFBGA, Packaging: Tray, Package / Case: 165-TBGA, Mounting Type: Surface Mount, Memory Size: 18Mbit, Memory Type: Volatile, Operating Temperature: 0°C ~ 70°C (TA), Voltage - Supply: 3.135V ~ 3.465V, Technology: SRAM - Synchronous, SDR, Clock Frequency: 200 MHz, Memory Format: SRAM, Supplier Device Package: 165-TFBGA (13x15), Memory Interface: Parallel, Access Time: 3 ns, Memory Organization: 1M x 18, DigiKey Programmable: Not Verified.
Інші пропозиції IS61NLP102418B-250B3L
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
IS61NLP102418B-250B3L | Виробник : ISSI, Integrated Silicon Solution Inc |
Description: IC SRAM 18MBIT PARALLEL 165TFBGA Packaging: Tray Package / Case: 165-TBGA Mounting Type: Surface Mount Memory Size: 18Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 3.135V ~ 3.465V Technology: SRAM - Synchronous, SDR Clock Frequency: 200 MHz Memory Format: SRAM Supplier Device Package: 165-TFBGA (13x15) Memory Interface: Parallel Access Time: 3 ns Memory Organization: 1M x 18 DigiKey Programmable: Not Verified |
товару немає в наявності |
|
 |
IS61NLP102418B-250B3L | Виробник : ISSI |
SRAM 18Mb,"No-Wait"/Pipeline,Sync,1Mb x 18,250Mhz,3.3v/2.5v - I/O,165 Ball BGA, RoHS |
товару немає в наявності |
|
| IS61NLP102418B-250B3L | Виробник : ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 2.6ns; TFBGA165; 0÷70°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 18Mb SRAM Memory organisation: 1Mx18bit Operating voltage: 3.3V Access time: 2.6ns Case: TFBGA165 Kind of interface: parallel Mounting: SMD Operating temperature: 0...70°C Kind of package: in-tray; tube |
товару немає в наявності |