IS61NLP102418B-250B3LI ISSI, Integrated Silicon Solution Inc
Виробник: ISSI, Integrated Silicon Solution IncDescription: IC SRAM 18MBIT PARALLEL 165TFBGA
Packaging: Tray
Package / Case: 165-TBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.465V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 165-TFBGA (13x15)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
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Технічний опис IS61NLP102418B-250B3LI ISSI, Integrated Silicon Solution Inc
Description: IC SRAM 18MBIT PARALLEL 165TFBGA, Packaging: Tray, Package / Case: 165-TBGA, Mounting Type: Surface Mount, Memory Size: 18Mbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 3.135V ~ 3.465V, Technology: SRAM - Synchronous, SDR, Clock Frequency: 200 MHz, Memory Format: SRAM, Supplier Device Package: 165-TFBGA (13x15), Memory Interface: Parallel, Access Time: 3 ns, Memory Organization: 1M x 18, DigiKey Programmable: Not Verified.
Інші пропозиції IS61NLP102418B-250B3LI
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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IS61NLP102418B-250B3LI | Виробник : ISSI |
SRAM 18Mb,"No-Wait"/Pipeline,Sync,1Mb x 18,250Mhz,3.3v/2.5v - I/O,165 Ball BGA, RoHS |
товару немає в наявності |
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| IS61NLP102418B-250B3LI | Виробник : ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 2.6ns; TFBGA165 Type of integrated circuit: SRAM memory Kind of package: in-tray; tube Mounting: SMD Case: TFBGA165 Kind of interface: parallel Kind of memory: SRAM Operating temperature: -40...85°C Access time: 2.6ns Operating voltage: 3.3V Memory organisation: 1Mx18bit Memory: 18Mb SRAM |
товару немає в наявності |