Технічний опис IS61NLP12836B-200TQLI ISSI
Description: IC SRAM 4.5MBIT PARALLEL 100TQFP, Packaging: Tray, Package / Case: 100-LQFP, Mounting Type: Surface Mount, Memory Size: 4.5Mbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 3.135V ~ 3.465V, Technology: SRAM - Synchronous, SDR, Clock Frequency: 200 MHz, Memory Format: SRAM, Supplier Device Package: 100-LQFP (14x20), Memory Interface: Parallel, Access Time: 3.1 ns, Memory Organization: 128K x 36, DigiKey Programmable: Not Verified.
Інші пропозиції IS61NLP12836B-200TQLI
| Фото | Назва | Виробник | Інформація |
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IS61NLP12836B-200TQLI | Виробник : ISSI |
 Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 3.1ns; TQFP100 Case: TQFP100 Operating voltage: 3.3V Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 128kx36bit Access time: 3.1ns Kind of package: in-tray; tube Kind of interface: parallel Memory: 4.5Mb SRAM Mounting: SMD Operating temperature: -40...85°C кількість в упаковці: 72 шт |
товару немає в наявності |
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IS61NLP12836B-200TQLI | Виробник : ISSI, Integrated Silicon Solution Inc |
Description: IC SRAM 4.5MBIT PARALLEL 100TQFP Packaging: Tray Package / Case: 100-LQFP Mounting Type: Surface Mount Memory Size: 4.5Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 3.135V ~ 3.465V Technology: SRAM - Synchronous, SDR Clock Frequency: 200 MHz Memory Format: SRAM Supplier Device Package: 100-LQFP (14x20) Memory Interface: Parallel Access Time: 3.1 ns Memory Organization: 128K x 36 DigiKey Programmable: Not Verified |
товару немає в наявності |
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IS61NLP12836B-200TQLI | Виробник : ISSI |
SRAM 4Mb,"No-Wait"/Pipeline,Sync,128K x 36,200Mhz,3.3v I/O,100 Pin TQFP, RoHS |
товару немає в наявності |
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IS61NLP12836B-200TQLI | Виробник : ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 3.1ns; TQFP100 Case: TQFP100 Operating voltage: 3.3V Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 128kx36bit Access time: 3.1ns Kind of package: in-tray; tube Kind of interface: parallel Memory: 4.5Mb SRAM Mounting: SMD Operating temperature: -40...85°C |
товару немає в наявності |