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IS61NLP51218B-200TQLI-TR ISSI

IS61NLP25636A-200B3LI.pdf
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 3.1ns; QFP100; parallel
Type of integrated circuit: SRAM memory
Case: QFP100
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Memory: 9Mb SRAM
Kind of interface: parallel
Memory organisation: 512kx18bit
Operating voltage: 3.3V
Kind of memory: SRAM
Access time: 3.1ns
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Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
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Технічний опис IS61NLP51218B-200TQLI-TR ISSI

Category: Parallel SRAM memories - integ. circ., Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 3.1ns; QFP100; parallel, Type of integrated circuit: SRAM memory, Case: QFP100, Mounting: SMD, Kind of package: reel; tape, Operating temperature: -40...85°C, Memory: 9Mb SRAM, Kind of interface: parallel, Memory organisation: 512kx18bit, Operating voltage: 3.3V, Kind of memory: SRAM, Access time: 3.1ns.