Технічний опис IS61VPS51236B-200TQLI-TR ISSI
Description: IC SRAM 18MBIT PARALLEL 100LQFP, Packaging: Tape & Reel (TR), Package / Case: 100-LQFP, Mounting Type: Surface Mount, Memory Size: 18Mbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 2.375V ~ 2.625V, Technology: SRAM - Synchronous, SDR, Clock Frequency: 200 MHz, Memory Format: SRAM, Supplier Device Package: 100-LQFP (14x20), Memory Interface: Parallel, Access Time: 3 ns, Memory Organization: 512K x 36, DigiKey Programmable: Not Verified. 
Інші пропозиції IS61VPS51236B-200TQLI-TR
| Фото | Назва | Виробник | Інформація | Доступність | Ціна | 
|---|---|---|---|---|---|
|   | IS61VPS51236B-200TQLI-TR | Виробник : ISSI, Integrated Silicon Solution Inc |  Description: IC SRAM 18MBIT PARALLEL 100LQFP Packaging: Tape & Reel (TR) Package / Case: 100-LQFP Mounting Type: Surface Mount Memory Size: 18Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.375V ~ 2.625V Technology: SRAM - Synchronous, SDR Clock Frequency: 200 MHz Memory Format: SRAM Supplier Device Package: 100-LQFP (14x20) Memory Interface: Parallel Access Time: 3 ns Memory Organization: 512K x 36 DigiKey Programmable: Not Verified | товару немає в наявності | |
|   | IS61VPS51236B-200TQLI-TR | Виробник : ISSI |  SRAM 18Mb,Pipeline,Sync,512K x 36,200MHz,2.5V I/O,100 Pin TQFP,RoHS | товару немає в наявності | |
| IS61VPS51236B-200TQLI-TR | Виробник : ISSI |  Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 2.5V; 3ns; QFP100; parallel Operating temperature: -40...85°C Case: QFP100 Mounting: SMD Kind of memory: SRAM Access time: 3ns Operating voltage: 2.5V Memory: 18Mb SRAM Kind of package: reel; tape Memory organisation: 512kx36bit Type of integrated circuit: SRAM memory Kind of interface: parallel | товару немає в наявності |