IS61WV102416EDBLL-10B2LI ISSI, Integrated Silicon Solution Inc
Виробник: ISSI, Integrated Silicon Solution IncDescription: IC SRAM 16MBIT PARALLEL 48TFBGA
Packaging: Tray
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.4V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-TFBGA (6x8)
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
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Технічний опис IS61WV102416EDBLL-10B2LI ISSI, Integrated Silicon Solution Inc
Description: IC SRAM 16MBIT PARALLEL 48TFBGA, Packaging: Tray, Package / Case: 48-TFBGA, Mounting Type: Surface Mount, Memory Size: 16Mbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 2.4V ~ 3.6V, Technology: SRAM - Asynchronous, Memory Format: SRAM, Supplier Device Package: 48-TFBGA (6x8), Write Cycle Time - Word, Page: 10ns, Memory Interface: Parallel, Access Time: 10 ns, Memory Organization: 1M x 16, DigiKey Programmable: Not Verified.
Інші пропозиції IS61WV102416EDBLL-10B2LI
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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IS61WV102416EDBLL-10B2LI | Виробник : ISSI |
SRAM 16Mb,High-Speed,Async,1Mbx16, 10ns, 2.4v-3.6v, 48 Ball mBGA (6x8 mm), ERR1/ERR2 Pins, RoHS |
товару немає в наявності |
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| IS61WV102416EDBLL-10B2LI | Виробник : ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.4÷3.6V; 10ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Operating voltage: 2.4...3.6V Access time: 10ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
товару немає в наявності |