IS61WV10248EEBLL-10B2LI ISSI, Integrated Silicon Solution Inc
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC SRAM 8MBIT PAR
Memory Organization: 1M x 8
Access Time: 10 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 10ns
Supplier Device Package: 48-TFBGA (6x8)
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 2.4V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 8Mbit
Mounting Type: Surface Mount
Package / Case: 48-TFBGA
Packaging: Bulk
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Технічний опис IS61WV10248EEBLL-10B2LI ISSI, Integrated Silicon Solution Inc
Description: IC SRAM 8MBIT PAR, Memory Organization: 1M x 8, Access Time: 10 ns, Memory Interface: Parallel, Write Cycle Time - Word, Page: 10ns, Supplier Device Package: 48-TFBGA (6x8), Memory Format: SRAM, Technology: SRAM - Asynchronous, Voltage - Supply: 2.4V ~ 3.6V, Operating Temperature: -40°C ~ 85°C (TA), Memory Type: Volatile, Memory Size: 8Mbit, Mounting Type: Surface Mount, Package / Case: 48-TFBGA, Packaging: Bulk.
Інші пропозиції IS61WV10248EEBLL-10B2LI
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
IS61WV10248EEBLL-10B2LI | Виробник : ISSI |
SRAM 8Mb,High-Speed/Low Power,Async with ECC,1Mb x 8,10ns,2.4V-3.6V,48 Ball mBGA (6x8 mm), ERR1/2 pins, RoHS |
товару немає в наявності |