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IS61WV25616EDALL-20BLI-TR ISSI, Integrated Silicon Solution Inc
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC SRAM 4MBIT PARALLEL 48TFBGA
DigiKey Programmable: Not Verified
Memory Organization: 256K x 16
Access Time: 20 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 20ns
Part Status: Active
Supplier Device Package: 48-TFBGA (6x8)
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 1.65V ~ 2.2V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 4Mbit
Mounting Type: Surface Mount
Package / Case: 48-TFBGA
Packaging: Tape & Reel (TR)
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Технічний опис IS61WV25616EDALL-20BLI-TR ISSI, Integrated Silicon Solution Inc
Description: IC SRAM 4MBIT PARALLEL 48TFBGA, DigiKey Programmable: Not Verified, Memory Organization: 256K x 16, Access Time: 20 ns, Memory Interface: Parallel, Write Cycle Time - Word, Page: 20ns, Part Status: Active, Supplier Device Package: 48-TFBGA (6x8), Memory Format: SRAM, Technology: SRAM - Asynchronous, Voltage - Supply: 1.65V ~ 2.2V, Operating Temperature: -40°C ~ 85°C (TA), Memory Type: Volatile, Memory Size: 4Mbit, Mounting Type: Surface Mount, Package / Case: 48-TFBGA, Packaging: Tape & Reel (TR).
Інші пропозиції IS61WV25616EDALL-20BLI-TR
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
IS61WV25616EDALL-20BLI-TR | Виробник : ISSI |
SRAM 4Mb,High-Speed/Low Power,Async with ECC, 256K x 16, 20ns, 1.65V-2.2V, 48 Ball mBGA (6x8 mm), RoHS |
товару немає в наявності |