Технічний опис IS61WV25616EDBLL-10BLI-TR ISSI
Description: IC SRAM 4MBIT PARALLEL 48TFBGA, Packaging: Tape & Reel (TR), Package / Case: 48-TFBGA, Mounting Type: Surface Mount, Memory Size: 4Mbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 2.4V ~ 3.6V, Technology: SRAM - Asynchronous, Memory Format: SRAM, Supplier Device Package: 48-TFBGA (6x8), Part Status: Active, Write Cycle Time - Word, Page: 10ns, Memory Interface: Parallel, Access Time: 10 ns, Memory Organization: 256K x 16, DigiKey Programmable: Not Verified.
Інші пропозиції IS61WV25616EDBLL-10BLI-TR
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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IS61WV25616EDBLL-10BLI-TR | Виробник : ISSI |
 SRAM Chip Async Single 2.5V/3.3V 4M-bit 256K x 16 10ns 48-Pin TFBGA T/R |
товару немає в наявності |
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IS61WV25616EDBLL-10BLI-TR | Виробник : ISSI, Integrated Silicon Solution Inc |
Description: IC SRAM 4MBIT PARALLEL 48TFBGA Packaging: Tape & Reel (TR) Package / Case: 48-TFBGA Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.4V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 48-TFBGA (6x8) Part Status: Active Write Cycle Time - Word, Page: 10ns Memory Interface: Parallel Access Time: 10 ns Memory Organization: 256K x 16 DigiKey Programmable: Not Verified |
товару немає в наявності |
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IS61WV25616EDBLL-10BLI-TR | Виробник : ISSI |
SRAM 4Mb,High-Speed/Low Power,Async with ECC,256K x 16,10ns,3.3V,48 Ball mBGA (6x8 mm), RoHS |
товару немає в наявності |