Технічний опис IS61WV25616EFBLL-10BLI-TR ISSI
Description: 4Mb,High-Speed/Low Power,Async w, Packaging: Tape & Reel (TR), Package / Case: 48-TFBGA, Mounting Type: Surface Mount, Memory Size: 4Mbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 2.4V ~ 3.6V, Technology: SRAM - Asynchronous, Memory Format: SRAM, Supplier Device Package: 48-TFBGA (6x8), Part Status: Active, Write Cycle Time - Word, Page: 10ns, Memory Interface: Parallel, Access Time: 10 ns, Memory Organization: 256K x 16, DigiKey Programmable: Not Verified.
Інші пропозиції IS61WV25616EFBLL-10BLI-TR
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
IS61WV25616EFBLL-10BLI-TR | Виробник : ISSI |
 High Speed Asynchronous CMOS Static RAM |
товару немає в наявності |
|
| IS61WV25616EFBLL-10BLI-TR | Виробник : ISSI, Integrated Silicon Solution Inc |
Description: 4Mb,High-Speed/Low Power,Async w Packaging: Tape & Reel (TR) Package / Case: 48-TFBGA Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.4V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 48-TFBGA (6x8) Part Status: Active Write Cycle Time - Word, Page: 10ns Memory Interface: Parallel Access Time: 10 ns Memory Organization: 256K x 16 DigiKey Programmable: Not Verified |
товару немає в наявності |