IS61WV51216EEALL-20BLI ISSI, Integrated Silicon Solution Inc
Виробник: ISSI, Integrated Silicon Solution IncDescription: 8Mb,High-Speed/Low Power,Async w
Packaging: Bulk
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 2.2V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-TFBGA (6x8)
Write Cycle Time - Word, Page: 20ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 512K x 16
DigiKey Programmable: Not Verified
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Технічний опис IS61WV51216EEALL-20BLI ISSI, Integrated Silicon Solution Inc
Description: 8Mb,High-Speed/Low Power,Async w, Packaging: Bulk, Package / Case: 48-TFBGA, Mounting Type: Surface Mount, Memory Size: 8Mbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 1.65V ~ 2.2V, Technology: SRAM - Asynchronous, Memory Format: SRAM, Supplier Device Package: 48-TFBGA (6x8), Write Cycle Time - Word, Page: 20ns, Memory Interface: Parallel, Access Time: 20 ns, Memory Organization: 512K x 16, DigiKey Programmable: Not Verified.
Інші пропозиції IS61WV51216EEALL-20BLI
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
IS61WV51216EEALL-20BLI | Виробник : ISSI |
SRAM 8Mb,High-Speed/Low Power,Async with ECC,512K x 16, 20ns,1.65V-2.2V, 48 Ball mBGA (6x8 mm), RoHS |
товару немає в наявності |