IS61WV51232BLL-10BLI-TR ISSI, Integrated Silicon Solution Inc
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC SRAM 16MBIT PARALLEL 90TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 90-TFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 90-TFBGA (8x13)
Part Status: Active
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 512K x 32
DigiKey Programmable: Not Verified
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Технічний опис IS61WV51232BLL-10BLI-TR ISSI, Integrated Silicon Solution Inc
Description: IC SRAM 16MBIT PARALLEL 90TFBGA, Packaging: Tape & Reel (TR), Package / Case: 90-TFBGA, Mounting Type: Surface Mount, Memory Size: 16Mbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 1.65V ~ 3.6V, Technology: SRAM - Asynchronous, Memory Format: SRAM, Supplier Device Package: 90-TFBGA (8x13), Part Status: Active, Write Cycle Time - Word, Page: 10ns, Memory Interface: Parallel, Access Time: 10 ns, Memory Organization: 512K x 32, DigiKey Programmable: Not Verified.
Інші пропозиції IS61WV51232BLL-10BLI-TR
| Фото | Назва | Виробник | Інформація |
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Ціна |
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IS61WV51232BLL-10BLI-TR | Виробник : ISSI |
SRAM 16Mb,High-Speed,Async,512K x 32,8ns/3.3v,or 10ns/2.4v-3.6v, 90 Ball mBGA (8x13 mm), RoHS |
товару немає в наявності |
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| IS61WV51232BLL-10BLI-TR | Виробник : ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 16MbSRAM; 512kx32bit; 2.4÷3.6V; 10ns; TFBGA90 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 16Mb SRAM Memory organisation: 512kx32bit Operating voltage: 2.4...3.6V Access time: 10ns Case: TFBGA90 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |