Технічний опис IS61WV6416BLL-12BLI ISSI
Category: Parallel SRAM memories - integ. circ., Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 3.3V; 12ns; TFBGA48; parallel, Type of integrated circuit: SRAM memory, Kind of memory: SRAM, Memory: 1Mb SRAM, Memory organisation: 64kx16bit, Access time: 12ns, Case: TFBGA48, Kind of interface: parallel, Mounting: SMD, Operating temperature: -40...85°C, Kind of package: in-tray; tube, Operating voltage: 3.3V, кількість в упаковці: 480 шт.
Інші пропозиції IS61WV6416BLL-12BLI
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| IS61WV6416BLL-12BLI | Виробник : ISSI |
 Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 3.3V; 12ns; TFBGA48; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 64kx16bit Access time: 12ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 3.3V кількість в упаковці: 480 шт |
товар відсутній |
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%20Renders/706;48TFBGA-1.2-6x8;;48.jpg "IS61WV6416BLL-12BLI") |
IS61WV6416BLL-12BLI | Виробник : ISSI, Integrated Silicon Solution Inc |
Description: IC SRAM 1M PARALLEL 48MINIBGA |
товар відсутній |
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| IS61WV6416BLL-12BLI | Виробник : ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 3.3V; 12ns; TFBGA48; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 64kx16bit Access time: 12ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 3.3V |
товар відсутній |