IS62WV102416ALL-35MLI ISSI, Integrated Silicon Solution Inc
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC SRAM 16MBIT PAR 48MINIBGA
Packaging: Tray
DigiKey Programmable: Not Verified
Memory Organization: 1M x 16
Access Time: 35 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 35ns
Part Status: Active
Supplier Device Package: 48-miniBGA (9x11)
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 1.65V ~ 2.2V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 16Mbit
Mounting Type: Surface Mount
Package / Case: 48-TFBGA
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Технічний опис IS62WV102416ALL-35MLI ISSI, Integrated Silicon Solution Inc
Description: IC SRAM 16MBIT PAR 48MINIBGA, Packaging: Tray, DigiKey Programmable: Not Verified, Memory Organization: 1M x 16, Access Time: 35 ns, Memory Interface: Parallel, Write Cycle Time - Word, Page: 35ns, Part Status: Active, Supplier Device Package: 48-miniBGA (9x11), Memory Format: SRAM, Technology: SRAM - Asynchronous, Voltage - Supply: 1.65V ~ 2.2V, Operating Temperature: -40°C ~ 85°C (TA), Memory Type: Volatile, Memory Size: 16Mbit, Mounting Type: Surface Mount, Package / Case: 48-TFBGA.
Інші пропозиції IS62WV102416ALL-35MLI
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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IS62WV102416ALL-35MLI | Виробник : ISSI |
SRAM 16Mb, Low Power/Power Saver,Async,1Mb x 16,1.65v-2.2v,48 Ball mBGA (9x11 mm), RoHS |
товару немає в наявності |
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| IS62WV102416ALL-35MLI | Виробник : ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 1.65÷2.2V; 35ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Operating voltage: 1.65...2.2V Access time: 35ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
товару немає в наявності |