IS62WV12816EBLL-45BLI-TR ISSI
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Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 128kx16bit; 2.2÷3.6V; 45ns; TFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx16bit
Access time: 45ns
Case: TFBGA48
Kind of interface: parallel
Memory capacity: 2Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.2...3.6V
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Технічний опис IS62WV12816EBLL-45BLI-TR ISSI
Category: Parallel SRAM memories - integ. circ., Description: IC: SRAM memory; 128kx16bit; 2.2÷3.6V; 45ns; TFBGA48; parallel, Type of integrated circuit: SRAM memory, Kind of memory: SRAM, Memory organisation: 128kx16bit, Access time: 45ns, Case: TFBGA48, Kind of interface: parallel, Memory capacity: 2Mb, Mounting: SMD, Operating temperature: -40...85°C, Kind of package: reel; tape, Operating voltage: 2.2...3.6V.
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IS62WV12816EBLL-45BLI-TR | Виробник : ISSI, Integrated Silicon Solution Inc |
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товар відсутній |
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IS62WV12816EBLL-45BLI-TR | Виробник : ISSI |
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товар відсутній |
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IS62WV12816EBLL-45BLI-TR | Виробник : ISSI |
![]() Description: IC: SRAM memory; 128kx16bit; 2.2÷3.6V; 45ns; TFBGA48; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 128kx16bit Access time: 45ns Case: TFBGA48 Kind of interface: parallel Memory capacity: 2Mb Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Operating voltage: 2.2...3.6V |
товар відсутній |