IS62WV51216ALL-70BLI-TR ISSI, Integrated Silicon Solution Inc
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC SRAM 8MBIT PARALLEL 48MINIBGA
DigiKey Programmable: Not Verified
Memory Organization: 512K x 16
Access Time: 70 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 70ns
Supplier Device Package: 48-miniBGA (7.2x8.7)
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 2.5V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 8Mbit
Mounting Type: Surface Mount
Package / Case: 48-TFBGA
Packaging: Tape & Reel (TR)
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Технічний опис IS62WV51216ALL-70BLI-TR ISSI, Integrated Silicon Solution Inc
Description: IC SRAM 8MBIT PARALLEL 48MINIBGA, DigiKey Programmable: Not Verified, Memory Organization: 512K x 16, Access Time: 70 ns, Memory Interface: Parallel, Write Cycle Time - Word, Page: 70ns, Supplier Device Package: 48-miniBGA (7.2x8.7), Memory Format: SRAM, Technology: SRAM - Asynchronous, Voltage - Supply: 2.5V ~ 3.6V, Operating Temperature: -40°C ~ 85°C (TA), Memory Type: Volatile, Memory Size: 8Mbit, Mounting Type: Surface Mount, Package / Case: 48-TFBGA, Packaging: Tape & Reel (TR).
Інші пропозиції IS62WV51216ALL-70BLI-TR
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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IS62WV51216ALL-70BLI-TR | Виробник : ISSI |
SRAM 8Mb, Low Power/Power Saver,Async,512K x 16,70ns,1.65v-2.2v,48 Ball mBGA (7.2x8.7mm), RoHS |
товару немає в наявності |
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| IS62WV51216ALL-70BLI-TR | Виробник : ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 1.65÷2.2V; 70ns; miniBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Operating voltage: 1.65...2.2V Access time: 70ns Case: miniBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |