Технічний опис IS62WV51216EALL-55BLI ISSI
Description: IC SRAM 8MBIT PARALLEL 48VFBGA, Packaging: Tray, Package / Case: 48-VFBGA, Mounting Type: Surface Mount, Memory Size: 8Mbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 1.65V ~ 2.2V, Technology: SRAM - Asynchronous, Memory Format: SRAM, Supplier Device Package: 48-VFBGA (6x8), Write Cycle Time - Word, Page: 55ns, Memory Interface: Parallel, Access Time: 55 ns, Memory Organization: 512K x 16, DigiKey Programmable: Not Verified.
Інші пропозиції IS62WV51216EALL-55BLI
| Фото | Назва | Виробник | Інформація |
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Ціна |
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IS62WV51216EALL-55BLI | Виробник : ISSI |
 SRAM Chip Async Single 1.8V 8M-bit 512K x 16 55ns 48-Pin VFBGA |
товару немає в наявності |
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IS62WV51216EALL-55BLI | Виробник : ISSI, Integrated Silicon Solution Inc |
Description: IC SRAM 8MBIT PARALLEL 48VFBGA Packaging: Tray Package / Case: 48-VFBGA Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2.2V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 48-VFBGA (6x8) Write Cycle Time - Word, Page: 55ns Memory Interface: Parallel Access Time: 55 ns Memory Organization: 512K x 16 DigiKey Programmable: Not Verified |
товару немає в наявності |
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IS62WV51216EALL-55BLI | Виробник : ISSI |
SRAM 8Mb, Low Power/Power Saver,Async,512K x 16,55ns,1.65v-2.2v,48 Ball mBGA (6x8 mm), RoHS |
товару немає в наявності |
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| IS62WV51216EALL-55BLI | Виробник : ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 1.65÷2.2V; 55ns; VFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Operating voltage: 1.65...2.2V Access time: 55ns Case: VFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
товару немає в наявності |