Технічний опис IS62WV5128BLL-55BLI ISSI
Description: IC SRAM 4MBIT PARALLEL 36TFBGA, Packaging: Tray, Package / Case: 36-TFBGA, Mounting Type: Surface Mount, Memory Size: 4Mbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 2.5V ~ 3.6V, Technology: SRAM - Asynchronous, Memory Format: SRAM, Supplier Device Package: 36-TFBGA (6x8), Part Status: Active, Write Cycle Time - Word, Page: 55ns, Memory Interface: Parallel, Access Time: 55 ns, Memory Organization: 512K x 8, DigiKey Programmable: Not Verified.
Інші пропозиції IS62WV5128BLL-55BLI
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
IS62WV5128BLL-55BLI | Виробник : ISSI |
 SRAM Chip Async Single 3.3V 4M-bit 512K x 8 55ns 36-Pin Mini-BGA |
товару немає в наявності |
|
 |
IS62WV5128BLL-55BLI | Виробник : ISSI, Integrated Silicon Solution Inc |
Description: IC SRAM 4MBIT PARALLEL 36TFBGA Packaging: Tray Package / Case: 36-TFBGA Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.5V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 36-TFBGA (6x8) Part Status: Active Write Cycle Time - Word, Page: 55ns Memory Interface: Parallel Access Time: 55 ns Memory Organization: 512K x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
|
 |
IS62WV5128BLL-55BLI | Виробник : ISSI |
SRAM 4Mb, Low Power/Power Saver,Async,512K x 8,55ns,2.5v-3.6v,36 Ball mBGA (6x8 mm), RoHS |
товару немає в наявності |
|
| IS62WV5128BLL-55BLI | Виробник : ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.5÷3.6V; 55ns; TFBGA36 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 512kx8bit Operating voltage: 2.5...3.6V Access time: 55ns Case: TFBGA36 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
товару немає в наявності |