IS64WV51216EDBLL-10BLA3-TR ISSI, Integrated Silicon Solution Inc
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC SRAM 8MBIT PARALLEL 48TFBGA
Part Status: Active
Supplier Device Package: 48-TFBGA (6x8)
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 2.4V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Volatile
Memory Size: 8Mbit
Mounting Type: Surface Mount
Package / Case: 48-TFBGA
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Memory Organization: 512K x 16
Access Time: 10 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 10ns
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Технічний опис IS64WV51216EDBLL-10BLA3-TR ISSI, Integrated Silicon Solution Inc
Description: IC SRAM 8MBIT PARALLEL 48TFBGA, Part Status: Active, Supplier Device Package: 48-TFBGA (6x8), Memory Format: SRAM, Technology: SRAM - Asynchronous, Voltage - Supply: 2.4V ~ 3.6V, Operating Temperature: -40°C ~ 125°C (TA), Memory Type: Volatile, Memory Size: 8Mbit, Mounting Type: Surface Mount, Package / Case: 48-TFBGA, Packaging: Tape & Reel (TR), DigiKey Programmable: Not Verified, Memory Organization: 512K x 16, Access Time: 10 ns, Memory Interface: Parallel, Write Cycle Time - Word, Page: 10ns.
Інші пропозиції IS64WV51216EDBLL-10BLA3-TR
| Фото | Назва | Виробник | Інформація |
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Ціна |
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IS64WV51216EDBLL-10BLA3-TR | Виробник : ISSI |
SRAM 8Mb,High-Speed/Low Power,Async with ECC,512K x 16,10ns,2.4v-3.6v,48 Ball mBGA (6x8 mm), RoHS, Automotive temp |
товару немає в наявності |
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| IS64WV51216EDBLL-10BLA3-TR | Виробник : ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Operating voltage: 2.4...3.6V Access time: 10ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape |
товару немає в наявності |