Технічний опис IS64WV51216EEBLL-10BLA3 ISSI
Description: 8Mb,High-Speed/Low Power,Async w, Packaging: Tray, Package / Case: 48-TFBGA, Mounting Type: Surface Mount, Memory Size: 8Mbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 125°C (TA), Voltage - Supply: 2.4V ~ 3.6V, Technology: SRAM - Asynchronous, Memory Format: SRAM, Supplier Device Package: 48-TFBGA (6x8), Grade: Automotive, Write Cycle Time - Word, Page: 10ns, Memory Interface: Parallel, Access Time: 10 ns, Memory Organization: 512K x 16, Qualification: AEC-Q100.
Інші пропозиції IS64WV51216EEBLL-10BLA3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| IS64WV51216EEBLL-10BLA3 | Виробник : ISSI, Integrated Silicon Solution Inc |
Description: 8Mb,High-Speed/Low Power,Async w Packaging: Tray Package / Case: 48-TFBGA Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.4V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 48-TFBGA (6x8) Grade: Automotive Write Cycle Time - Word, Page: 10ns Memory Interface: Parallel Access Time: 10 ns Memory Organization: 512K x 16 Qualification: AEC-Q100 |
товару немає в наявності |
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IS64WV51216EEBLL-10BLA3 | Виробник : ISSI |
 SRAM 8Mb,High-Speed/Low Power,Async with ECC,512K x 16,10ns,2.4v-3.6v,48 Ball mBGA (6x8 mm), RoHS, Automotive temp |
товару немає в наявності |