| Кількість | Ціна |
|---|---|
| 1+ | 2066.40 грн |
| 10+ | 1886.53 грн |
| 25+ | 1588.31 грн |
| 50+ | 1549.37 грн |
Відгуки про товар
Написати відгук
Технічний опис IS64WV51216EEBLL-10CT2LA3 ISSI
Description: 8Mb,High-Speed/Low Power,Async w, Qualification: AEC-Q100, Grade: Automotive, Memory Organization: 512K x 16, Access Time: 10 ns, Memory Interface: Parallel, Write Cycle Time - Word, Page: 10ns, Part Status: Active, Supplier Device Package: 48-TSOP I, Memory Format: SRAM, Technology: SRAM - Asynchronous, Voltage - Supply: 2.4V ~ 3.6V, Operating Temperature: -40°C ~ 125°C (TA), Memory Type: Volatile, Memory Size: 8Mbit, Mounting Type: Surface Mount, Package / Case: 48-TFSOP (0.724", 18.40mm Width), Packaging: Tray.
Інші пропозиції IS64WV51216EEBLL-10CT2LA3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| IS64WV51216EEBLL-10CT2LA3 | Виробник : ISSI, Integrated Silicon Solution Inc |
Description: 8Mb,High-Speed/Low Power,Async w Qualification: AEC-Q100 Grade: Automotive Memory Organization: 512K x 16 Access Time: 10 ns Memory Interface: Parallel Write Cycle Time - Word, Page: 10ns Part Status: Active Supplier Device Package: 48-TSOP I Memory Format: SRAM Technology: SRAM - Asynchronous Voltage - Supply: 2.4V ~ 3.6V Operating Temperature: -40°C ~ 125°C (TA) Memory Type: Volatile Memory Size: 8Mbit Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Packaging: Tray |
товару немає в наявності |