IS64WV51216EEBLL-10CTLA3 ISSI, Integrated Silicon Solution Inc
Виробник: ISSI, Integrated Silicon Solution Inc
Description: 8Mb,High-Speed/Low Power,Async w
Qualification: AEC-Q100
Memory Organization: 512K x 16
Access Time: 10 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 10ns
Grade: Automotive
Supplier Device Package: 44-TSOP II
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 2.4V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Volatile
Memory Size: 8Mbit
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Packaging: Tray
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Технічний опис IS64WV51216EEBLL-10CTLA3 ISSI, Integrated Silicon Solution Inc
Description: 8Mb,High-Speed/Low Power,Async w, Qualification: AEC-Q100, Memory Organization: 512K x 16, Access Time: 10 ns, Memory Interface: Parallel, Write Cycle Time - Word, Page: 10ns, Grade: Automotive, Supplier Device Package: 44-TSOP II, Memory Format: SRAM, Technology: SRAM - Asynchronous, Voltage - Supply: 2.4V ~ 3.6V, Operating Temperature: -40°C ~ 125°C (TA), Memory Type: Volatile, Memory Size: 8Mbit, Mounting Type: Surface Mount, Package / Case: 44-TSOP (0.400", 10.16mm Width), Packaging: Tray.
Інші пропозиції IS64WV51216EEBLL-10CTLA3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
IS64WV51216EEBLL-10CTLA3 | Виробник : ISSI |
 SRAM 8Mb,High-Speed/Low Power,Async with ECC,512K x 16,10ns,24v-36v,44 Pin TSOP II, RoHS, Automotive temp |
товару немає в наявності |