Технічний опис IS64WV5128EDBLL-10BLA3 ISSI
Description: IC SRAM 4MBIT PARALLEL 36TFBGA, Packaging: Tray, Package / Case: 36-TFBGA, Mounting Type: Surface Mount, Memory Size: 4Mbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 125°C (TA), Voltage - Supply: 2.4V ~ 3.6V, Technology: SRAM - Asynchronous, Memory Format: SRAM, Supplier Device Package: 36-TFBGA (6x8), Part Status: Active, Write Cycle Time - Word, Page: 10ns, Memory Interface: Parallel, Access Time: 10 ns, Memory Organization: 512K x 8, DigiKey Programmable: Not Verified.
Інші пропозиції IS64WV5128EDBLL-10BLA3
| Фото | Назва | Виробник | Інформація |
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| IS64WV5128EDBLL-10BLA3 | Виробник : ISSI |
 SRAM Chip Async Single 2.5V/3.3V 4M-bit 512K x 8 10ns Automotive AEC-Q100 36-Pin TFBGA |
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| IS64WV5128EDBLL-10BLA3 | Виробник : ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.4÷3.6V; 10ns; TFBGA36 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 512kx8bit Access time: 10ns Case: TFBGA36 Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Kind of package: in-tray; tube Operating voltage: 2.4...3.6V кількість в упаковці: 480 шт |
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IS64WV5128EDBLL-10BLA3 | Виробник : ISSI, Integrated Silicon Solution Inc |
Description: IC SRAM 4MBIT PARALLEL 36TFBGA Packaging: Tray Package / Case: 36-TFBGA Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.4V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 36-TFBGA (6x8) Part Status: Active Write Cycle Time - Word, Page: 10ns Memory Interface: Parallel Access Time: 10 ns Memory Organization: 512K x 8 DigiKey Programmable: Not Verified |
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IS64WV5128EDBLL-10BLA3 | Виробник : ISSI |
SRAM 4Mb,High-Speed/Low Power,Async with ECC,512K x 8,10ns,2.4v-3.6v, 36 Ball mBGA (6x8mm), RoHS, Automotive temp |
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| IS64WV5128EDBLL-10BLA3 | Виробник : ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.4÷3.6V; 10ns; TFBGA36 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 512kx8bit Access time: 10ns Case: TFBGA36 Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Kind of package: in-tray; tube Operating voltage: 2.4...3.6V |
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