Технічний опис IS65WV102416DBLL-55CTLA3 ISSI
Description: IC SRAM 16MBIT PARALLEL 48TSOP I, Packaging: Tube, Package / Case: 48-TFSOP (0.724", 18.40mm Width), Mounting Type: Surface Mount, Memory Size: 16Mbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 125°C (TA), Voltage - Supply: 2.2V ~ 3.6V, Technology: SRAM - Asynchronous, Memory Format: SRAM, Supplier Device Package: 48-TSOP I, Part Status: Active, Write Cycle Time - Word, Page: 55ns, Memory Interface: Parallel, Access Time: 55 ns, Memory Organization: 1M x 16, DigiKey Programmable: Not Verified.
Інші пропозиції IS65WV102416DBLL-55CTLA3
| Фото | Назва | Виробник | Інформація |
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IS65WV102416DBLL-55CTLA3 | Виробник : ISSI |
 IC SRAM 16MB 45NS LP 48TSOP |
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| IS65WV102416DBLL-55CTLA3 | Виробник : ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.2÷3.6V; 55ns; TSOP48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Access time: 55ns Case: TSOP48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Kind of package: in-tray; tube Operating voltage: 2.2...3.6V кількість в упаковці: 96 шт |
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%20Renders/706;48TSOP-18.4;;48.jpg "IS65WV102416DBLL-55CTLA3") |
IS65WV102416DBLL-55CTLA3 | Виробник : ISSI, Integrated Silicon Solution Inc |
Description: IC SRAM 16MBIT PARALLEL 48TSOP I Packaging: Tube Package / Case: 48-TFSOP (0.724", 18.40mm Width) Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.2V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 48-TSOP I Part Status: Active Write Cycle Time - Word, Page: 55ns Memory Interface: Parallel Access Time: 55 ns Memory Organization: 1M x 16 DigiKey Programmable: Not Verified |
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| IS65WV102416DBLL-55CTLA3 | Виробник : ISSI |
SRAM 16Mb, Low Power/Power Saver,Async, 1Mb x 16/2Mb x 8, 45ns, 2.2v-3.6v,48 Pin TSOP I, RoHS |
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| IS65WV102416DBLL-55CTLA3 | Виробник : ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.2÷3.6V; 55ns; TSOP48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Access time: 55ns Case: TSOP48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Kind of package: in-tray; tube Operating voltage: 2.2...3.6V |
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