Технічний опис IS66WV51216EALL-70BLI-TR ISSI
Description: IC PSRAM 8MBIT PARALLEL 48TFBGA, Packaging: Tape & Reel (TR), Package / Case: 48-TFBGA, Mounting Type: Surface Mount, Memory Size: 8Mbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 1.7V ~ 1.95V, Technology: PSRAM (Pseudo SRAM), Memory Format: PSRAM, Supplier Device Package: 48-TFBGA (6x8), Write Cycle Time - Word, Page: 70ns, Memory Interface: Parallel, Access Time: 70 ns, Memory Organization: 512K x 16, DigiKey Programmable: Not Verified.
Інші пропозиції IS66WV51216EALL-70BLI-TR
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| IS66WV51216EALL-70BLI-TR | Виробник : ISSI, Integrated Silicon Solution Inc |
 Description: IC PSRAM 8MBIT PARALLEL 48TFBGAPackaging: Tape & Reel (TR) Package / Case: 48-TFBGA Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 1.95V Technology: PSRAM (Pseudo SRAM) Memory Format: PSRAM Supplier Device Package: 48-TFBGA (6x8) Write Cycle Time - Word, Page: 70ns Memory Interface: Parallel Access Time: 70 ns Memory Organization: 512K x 16 DigiKey Programmable: Not Verified |
товару немає в наявності |
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IS66WV51216EALL-70BLI-TR | Виробник : ISSI |
SRAM 8Mb,Pseudo SRAM,Async,512K x 16,70ns,1.7v~1.95v,48 Ball BGA (6x8mm), RoHS |
товару немає в наявності |
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| IS66WV51216EALL-70BLI-TR | Виробник : ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 1.7÷1.95V; 70ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Operating voltage: 1.7...1.95V Access time: 70ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |