IS66WV51216EBLL-55TLI-TR ISSI, Integrated Silicon Solution Inc
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC PSRAM 8MBIT PAR 44TSOP II
DigiKey Programmable: Not Verified
Memory Organization: 512K x 16
Access Time: 55 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 55ns
Supplier Device Package: 44-TSOP II
Memory Format: PSRAM
Technology: PSRAM (Pseudo SRAM)
Voltage - Supply: 2.5V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 8Mbit
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Packaging: Tape & Reel (TR)
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Технічний опис IS66WV51216EBLL-55TLI-TR ISSI, Integrated Silicon Solution Inc
Description: IC PSRAM 8MBIT PAR 44TSOP II, DigiKey Programmable: Not Verified, Memory Organization: 512K x 16, Access Time: 55 ns, Memory Interface: Parallel, Write Cycle Time - Word, Page: 55ns, Supplier Device Package: 44-TSOP II, Memory Format: PSRAM, Technology: PSRAM (Pseudo SRAM), Voltage - Supply: 2.5V ~ 3.6V, Operating Temperature: -40°C ~ 85°C (TA), Memory Type: Volatile, Memory Size: 8Mbit, Mounting Type: Surface Mount, Package / Case: 44-TSOP (0.400", 10.16mm Width), Packaging: Tape & Reel (TR).
Інші пропозиції IS66WV51216EBLL-55TLI-TR
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| IS66WV51216EBLL-55TLI-TR | Виробник : ISSI |
SRAM 8Mb,Pseudo SRAM,Async,512K x 16,55ns,2.5v 3.6v,44 Pin TSOP II, RoHS |
товару немає в наявності |
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| IS66WV51216EBLL-55TLI-TR | Виробник : ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 55ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Operating voltage: 2.5...3.6V Access time: 55ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |