IS66WVC2M16EALL-7010BLI-TR ISSI, Integrated Silicon Solution Inc
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC PSRAM 32MBIT PARALLEL 54VFBGA
Memory Organization: 2M x 16
Access Time: 70 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 70ns
Part Status: Active
DigiKey Programmable: Not Verified
Supplier Device Package: 54-VFBGA (6x8)
Memory Format: PSRAM
Technology: PSRAM (Pseudo SRAM)
Voltage - Supply: 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 32Mbit
Mounting Type: Surface Mount
Package / Case: 54-VFBGA
Packaging: Tape & Reel (TR)
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Технічний опис IS66WVC2M16EALL-7010BLI-TR ISSI, Integrated Silicon Solution Inc
Description: IC PSRAM 32MBIT PARALLEL 54VFBGA, Memory Organization: 2M x 16, Access Time: 70 ns, Memory Interface: Parallel, Write Cycle Time - Word, Page: 70ns, Part Status: Active, DigiKey Programmable: Not Verified, Supplier Device Package: 54-VFBGA (6x8), Memory Format: PSRAM, Technology: PSRAM (Pseudo SRAM), Voltage - Supply: 1.7V ~ 1.95V, Operating Temperature: -40°C ~ 85°C (TA), Memory Type: Volatile, Memory Size: 32Mbit, Mounting Type: Surface Mount, Package / Case: 54-VFBGA, Packaging: Tape & Reel (TR).
Інші пропозиції IS66WVC2M16EALL-7010BLI-TR
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| IS66WVC2M16EALL-7010BLI-TR | Виробник : ISSI |
SRAM 32Mb,Pseudo SRAM,Asynch/Page/Burst CRAM 1.5,2M x 16,70ns,1.7v~1.95v,54 Ball BGA (6x8 mm), RoHS |
товару немає в наявності |