IS66WVE4M16EALL-70BLI-TR ISSI
Виробник: ISSI
SRAM 64Mb,Pseudo SRAM,Asynch/Page, 4M x 16,70ns,VDD 1.7V-1.95V, VDDQ 1.7V-1.95V,48 Ball BGA (6x8 mm), RoHS
| Кількість | Ціна |
|---|---|
| 1+ | 438.11 грн |
| 10+ | 394.26 грн |
| 25+ | 335.88 грн |
| 50+ | 333.80 грн |
| 100+ | 299.72 грн |
| 250+ | 298.33 грн |
| 500+ | 279.55 грн |
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Технічний опис IS66WVE4M16EALL-70BLI-TR ISSI
Description: IC PSRAM 64MBIT PARALLEL 48TFBGA, Memory Organization: 4M x 16, Access Time: 70 ns, Memory Interface: Parallel, Write Cycle Time - Word, Page: 70ns, Part Status: Active, Supplier Device Package: 48-TFBGA (6x8), Memory Format: PSRAM, Technology: PSRAM (Pseudo SRAM), Voltage - Supply: 1.7V ~ 1.95V, Operating Temperature: -40°C ~ 85°C (TA), Memory Type: Volatile, Memory Size: 64Mbit, Mounting Type: Surface Mount, Package / Case: 48-TFBGA, Packaging: Tape & Reel (TR).
Інші пропозиції IS66WVE4M16EALL-70BLI-TR
| Фото | Назва | Виробник | Інформація |
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%20Renders/706;48TFBGA-1.2-6x8;;48.jpg "IS66WVE4M16EALL-70BLI-TR") |
IS66WVE4M16EALL-70BLI-TR | Виробник : ISSI, Integrated Silicon Solution Inc |
Description: IC PSRAM 64MBIT PARALLEL 48TFBGA Memory Organization: 4M x 16 Access Time: 70 ns Memory Interface: Parallel Write Cycle Time - Word, Page: 70ns Part Status: Active Supplier Device Package: 48-TFBGA (6x8) Memory Format: PSRAM Technology: PSRAM (Pseudo SRAM) Voltage - Supply: 1.7V ~ 1.95V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Volatile Memory Size: 64Mbit Mounting Type: Surface Mount Package / Case: 48-TFBGA Packaging: Tape & Reel (TR) |
товару немає в наявності |