IS66WVH8M8DALL-200B1LI-TR ISSI, Integrated Silicon Solution Inc
Виробник: ISSI, Integrated Silicon Solution Inc
Description: 64Mb, HyperRAM, 8Mbx8, 1.8V, 200
Memory Interface: HyperBus
Write Cycle Time - Word, Page: 400ns
Supplier Device Package: 24-TFBGA (6x8)
Memory Format: PSRAM
Clock Frequency: 200 MHz
Technology: PSRAM (Pseudo SRAM)
Voltage - Supply: 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 64Mbit
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Packaging: Tape & Reel (TR)
Memory Organization: 8M x 8
Access Time: 40 ns
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Технічний опис IS66WVH8M8DALL-200B1LI-TR ISSI, Integrated Silicon Solution Inc
Description: 64Mb, HyperRAM, 8Mbx8, 1.8V, 200, Memory Interface: HyperBus, Write Cycle Time - Word, Page: 400ns, Supplier Device Package: 24-TFBGA (6x8), Memory Format: PSRAM, Clock Frequency: 200 MHz, Technology: PSRAM (Pseudo SRAM), Voltage - Supply: 1.7V ~ 1.95V, Operating Temperature: -40°C ~ 85°C (TA), Memory Type: Volatile, Memory Size: 64Mbit, Mounting Type: Surface Mount, Package / Case: 24-TBGA, Packaging: Tape & Reel (TR), Memory Organization: 8M x 8, Access Time: 40 ns.
Інші пропозиції IS66WVH8M8DALL-200B1LI-TR
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
IS66WVH8M8DALL-200B1LI-TR | Виробник : ISSI |
DRAM 64Mb, HyperRAM, 8Mbx8, 1.8V, 200MHz, 24-ball TFBGA, RoHS |
товару немає в наявності |