ISA220280C03LMDSXTMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: ISA220280C03LMDSXTMA1
Supplier Device Package: PG-DSO-8-920
Vgs(th) (Max) @ Id: 2.7V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 13.4nC @ 10V
Rds On (Max) @ Id, Vgs: 22mOhm @ 8.4A, 10V, 28mOhm @ 8.1A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 8.4A (Tc), 6.1A (Ta), 8.1A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.4W (Ta), 2.5W (Tc)
Packaging: Cut Tape (CT)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 61.22 грн |
| 10+ | 36.86 грн |
| 100+ | 23.93 грн |
| 500+ | 17.24 грн |
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Технічний опис ISA220280C03LMDSXTMA1 Infineon Technologies
Description: ISA220280C03LMDSXTMA1, Operating Temperature: -55°C ~ 150°C (TJ), Configuration: N and P-Channel, Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR), Supplier Device Package: PG-DSO-8-920, Vgs(th) (Max) @ Id: 2.7V @ 1mA, Gate Charge (Qg) (Max) @ Vgs: 13.4nC @ 10V, Rds On (Max) @ Id, Vgs: 22mOhm @ 8.4A, 10V, 28mOhm @ 8.1A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 8.4A (Tc), 6.1A (Ta), 8.1A (Tc), Drain to Source Voltage (Vdss): 30V, Power - Max: 1.4W (Ta), 2.5W (Tc), Technology: MOSFET (Metal Oxide).
Інші пропозиції ISA220280C03LMDSXTMA1
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
ISA220280C03LMDSXTMA1 | Infineon Technologies |
MOSFETs OptiMOS Dual power MOSFET 30V |
на замовлення 396 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
|
|
ISA220280C03LMDSXTMA1 | Infineon Technologies |
Description: ISA220280C03LMDSXTMA1 Operating Temperature: -55°C ~ 150°C (TJ) Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Supplier Device Package: PG-DSO-8-920 Vgs(th) (Max) @ Id: 2.7V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 13.4nC @ 10V Rds On (Max) @ Id, Vgs: 22mOhm @ 8.4A, 10V, 28mOhm @ 8.1A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 15V Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 8.4A (Tc), 6.1A (Ta), 8.1A (Tc) Drain to Source Voltage (Vdss): 30V Power - Max: 1.4W (Ta), 2.5W (Tc) Technology: MOSFET (Metal Oxide) |
на замовлення 500 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 500 шт В кошику од. на суму грн. |
| ISA220280C03LMDSXTMA1 |
|
Виробник: Infineon Technologies
MOSFETs OptiMOS Dual power MOSFET 30V
MOSFETs OptiMOS Dual power MOSFET 30V
на замовлення 396 шт:
термін постачання 21-30 дні (днів)
| ISA220280C03LMDSXTMA1 |
|
Виробник: Infineon Technologies
Description: ISA220280C03LMDSXTMA1
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Supplier Device Package: PG-DSO-8-920
Vgs(th) (Max) @ Id: 2.7V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 13.4nC @ 10V
Rds On (Max) @ Id, Vgs: 22mOhm @ 8.4A, 10V, 28mOhm @ 8.1A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 8.4A (Tc), 6.1A (Ta), 8.1A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.4W (Ta), 2.5W (Tc)
Technology: MOSFET (Metal Oxide)
Description: ISA220280C03LMDSXTMA1
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Supplier Device Package: PG-DSO-8-920
Vgs(th) (Max) @ Id: 2.7V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 13.4nC @ 10V
Rds On (Max) @ Id, Vgs: 22mOhm @ 8.4A, 10V, 28mOhm @ 8.1A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 8.4A (Tc), 6.1A (Ta), 8.1A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.4W (Ta), 2.5W (Tc)
Technology: MOSFET (Metal Oxide)
на замовлення 500 шт:
термін постачання 21-31 дні (днів)