ISA250250N04LMDSXTMA1 Infineon Technologies
| Кількість | Ціна |
|---|---|
| 8+ | 44.57 грн |
| 10+ | 34.12 грн |
| 100+ | 22.20 грн |
| 500+ | 17.41 грн |
| 1000+ | 13.46 грн |
| 2500+ | 12.26 грн |
| 4000+ | 11.42 грн |
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Технічний опис ISA250250N04LMDSXTMA1 Infineon Technologies
Description: ISA250250N04LMDSXTMA1, Supplier Device Package: PG-DSO-8-920, Vgs(th) (Max) @ Id: 2.7V @ 1mA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 11.9nC @ 10V, Rds On (Max) @ Id, Vgs: 25mOhm @ 7.9A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 20V, Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta), 7.9A (Tc), Drain to Source Voltage (Vdss): 40V, Power - Max: 1.4W (Ta), 2.5W (Tc), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Інші пропозиції ISA250250N04LMDSXTMA1 за ціною від 22.81 грн до 58.68 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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ISA250250N04LMDSXTMA1 | Infineon Technologies |
 Description: ISA250250N04LMDSXTMA1Supplier Device Package: PG-DSO-8-920 Vgs(th) (Max) @ Id: 2.7V @ 1mA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 11.9nC @ 10V Rds On (Max) @ Id, Vgs: 25mOhm @ 7.9A, 10V Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 20V Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta), 7.9A (Tc) Drain to Source Voltage (Vdss): 40V Power - Max: 1.4W (Ta), 2.5W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
на замовлення 270 шт: термін постачання 21-31 дні (днів) |
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| ISA250250N04LMDSXTMA1 |
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Виробник: Infineon Technologies
Description: ISA250250N04LMDSXTMA1
Supplier Device Package: PG-DSO-8-920
Vgs(th) (Max) @ Id: 2.7V @ 1mA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 11.9nC @ 10V
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta), 7.9A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 1.4W (Ta), 2.5W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: ISA250250N04LMDSXTMA1
Supplier Device Package: PG-DSO-8-920
Vgs(th) (Max) @ Id: 2.7V @ 1mA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 11.9nC @ 10V
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta), 7.9A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 1.4W (Ta), 2.5W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
на замовлення 270 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 58.68 грн |
| 10+ | 35.20 грн |
| 100+ | 22.81 грн |