ISC010N06NM5ATMA1 Infineon Technologies

Description: OPTIMOS5 60 V POWER MOSFET IN SU, Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Part Status: Active, Supplier Device Package: PG-TSON-8-3, Vgs(th) (Max) @ Id: 3.3V @ 147µA, Power Dissipation (Max): 3W (Ta), 214W (Tc), Rds On (Max) @ Id, Vgs: 1.05mOhm @ 50A, 10V, Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 330A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR), Operating Temperature: -55°C ~ 175°C (TJ).