ISC011N04NM7VATMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: ISC011N04NM7VATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 256A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 3.15V @ 56µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 20 V
| Кількість | Ціна |
|---|---|
| 2+ | 158.81 грн |
| 10+ | 98.01 грн |
| 100+ | 66.62 грн |
| 500+ | 49.90 грн |
| 1000+ | 45.84 грн |
| 2000+ | 44.96 грн |
Відгуки про товар
Написати відгук
Технічний опис ISC011N04NM7VATMA1 Infineon Technologies
Description: ISC011N04NM7VATMA1, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 256A (Tc), Rds On (Max) @ Id, Vgs: 1.05mOhm @ 50A, 15V, Power Dissipation (Max): 3W (Ta), 136W (Tc), Vgs(th) (Max) @ Id: 3.15V @ 56µA, Supplier Device Package: PG-TDSON-8, Drive Voltage (Max Rds On, Min Rds On): 10V, 15V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 20 V.
Інші пропозиції ISC011N04NM7VATMA1 за ціною від 41.79 грн до 167.13 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
ISC011N04NM7VATMA1 | Виробник : Infineon Technologies |
MOSFETs OptiMOS 7 Power-Transistor, 40 V |
на замовлення 4636 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
|
|
ISC011N04NM7VATMA1 | Виробник : Infineon Technologies |
Description: ISC011N04NM7VATMA1 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 256A (Tc) Rds On (Max) @ Id, Vgs: 1.05mOhm @ 50A, 15V Power Dissipation (Max): 3W (Ta), 136W (Tc) Vgs(th) (Max) @ Id: 3.15V @ 56µA Supplier Device Package: PG-TDSON-8 Drive Voltage (Max Rds On, Min Rds On): 10V, 15V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 20 V |
товару немає в наявності |