ISC022N10NM6ATMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: TRENCH >=100V PG-TSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 230A (Tc)
Rds On (Max) @ Id, Vgs: 2.24mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 254W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 147µA
Supplier Device Package: PG-TSON-8-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6880 pF @ 50 V
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Технічний опис ISC022N10NM6ATMA1 Infineon Technologies
Description: TRENCH >=100V PG-TSON-8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 230A (Tc), Rds On (Max) @ Id, Vgs: 2.24mOhm @ 50A, 10V, Power Dissipation (Max): 3W (Ta), 254W (Tc), Vgs(th) (Max) @ Id: 3.3V @ 147µA, Supplier Device Package: PG-TSON-8-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 8V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6880 pF @ 50 V.
Інші пропозиції ISC022N10NM6ATMA1 за ціною від 116.30 грн до 312.41 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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ISC022N10NM6ATMA1 | Infineon Technologies |
MOSFETs TRENCH >=100V |
на замовлення 4929 шт: термін постачання 21-30 дні (днів) |
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ISC022N10NM6ATMA1 | Infineon Technologies |
Description: TRENCH >=100V PG-TSON-8 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 230A (Tc) Rds On (Max) @ Id, Vgs: 2.24mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 254W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 147µA Supplier Device Package: PG-TSON-8-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6880 pF @ 50 V |
на замовлення 12134 шт: термін постачання 21-31 дні (днів) |
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| ISC022N10NM6ATMA1 |
|
Виробник: Infineon Technologies
MOSFETs TRENCH >=100V
MOSFETs TRENCH >=100V
на замовлення 4929 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 255.73 грн |
| 10+ | 187.24 грн |
| 100+ | 140.26 грн |
| 500+ | 136.74 грн |
| 1000+ | 133.21 грн |
| 2500+ | 131.10 грн |
| 5000+ | 116.30 грн |
| ISC022N10NM6ATMA1 |
|
Виробник: Infineon Technologies
Description: TRENCH >=100V PG-TSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 230A (Tc)
Rds On (Max) @ Id, Vgs: 2.24mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 254W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 147µA
Supplier Device Package: PG-TSON-8-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6880 pF @ 50 V
Description: TRENCH >=100V PG-TSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 230A (Tc)
Rds On (Max) @ Id, Vgs: 2.24mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 254W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 147µA
Supplier Device Package: PG-TSON-8-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6880 pF @ 50 V
на замовлення 12134 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 312.41 грн |
| 10+ | 236.02 грн |
| 100+ | 201.26 грн |
| 500+ | 138.92 грн |